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512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
SST27SF512 / SST27SF010 / SST27SF020
SST27SF512 / 010 / 0205.0V-Read 512Kb / 1Mb / 2Mb (x8) MTP flash memories
Data Sheet
FEATURES:
* Organized as 64K x8 / 128K x8 / 256K x8 * 4.5-5.5V Read Operation * Superior Reliability - Endurance: At least 1000 Cycles - Greater than 100 years Data Retention * Low Power Consumption - Active Current: 20 mA (typical) - Standby Current: 10 A (typical) * Fast Read Access Time - 70 ns * Fast Byte-Program Operation - Byte-Program Time: 20 s (typical) - Chip Program Time: 1.4 seconds (typical) for SST27SF512 2.8 seconds (typical) for SST27SF010 5.6 seconds (typical) for SST27SF020 * Electrical Erase Using Programmer - Does not require UV source - Chip-Erase Time: 100 ms (typical) * TTL I/O Compatibility * JEDEC Standard Byte-wide EPROM Pinouts * Packages Available - 32-lead PLCC - 32-lead TSOP (8mm x 14mm) - 28-pin PDIP for SST27SF512 - 32-pin PDIP for SST27SF010/020 * All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST27SF512/010/020 are a 64K x8 / 128K x8 / 256K x8 CMOS, Many-Time Programmable (MTP) low cost flash, manufactured with SST's proprietary, high performance SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. These MTP devices can be electrically erased and programmed at least 1000 times using an external programmer with a 12V power supply. They have to be erased prior to programming. These devices conform to JEDEC standard pinouts for byte-wide memories. Featuring high-performance Byte-Program, the SST27SF512/010/020 provide a Byte-Program time of 20 s. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with an endurance of at least 1000 cycles. Data retention is rated at greater than 100 years. The SST27SF512/010/020 are suited for applications that require infrequent writes and low power nonvolatile storage. These devices will improve flexibility, efficiency, and performance while matching the low cost in nonvolatile applications that currently use UV-EPROMs, OTPs, and mask ROMs. To meet surface mount and conventional through hole requirements, the SST27SF512 are offered in 32-lead PLCC, 32-lead TSOP and 28-pin PDIP packages. The , SST27SF010/020 are offered in 32-pin PDIP 32-lead , PLCC, and 32-lead TSOP packages. See Figures 1, 2, and 3 for pin assignments.
(c)2005 Silicon Storage Technology, Inc. S71152-11-000 9/05 1
Device Operation
The SST27SF512/010/020 are a low cost flash solution that can be used to replace existing UV-EPROM, OTP, and mask ROM sockets. These devices are functionally (read and program) and pin compatible with industry standard EPROM products. In addition to EPROM functionality, these devices also support electrical Erase operation via an external programmer. They do not require a UV source to erase, and therefore the packages do not have a window.
Read
The Read operation of the SST27SF512/010/020 is controlled by CE# and OE#. Both CE# and OE# have to be low for the system to obtain data from the outputs. Once the address is stable, the address access time is equal to the delay from CE# to output (TCE). Data is available at the output after a delay of TOE from the falling edge of OE#, assuming that CE# pin has been low and the addresses have been stable for at least TCE-TOE. When the CE# pin is high, the chip is deselected and a typical standby current of 10 A is consumed. OE# is the output control and is used to gate data from the output pins. The data bus is in high impedance state when either CE# or OE# is high.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MTP is a trademark of Silicon Storage Technology, Inc. These specifications are subject to change without notice.
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
Byte-Program Operation
The SST27SF512/010/020 are programmed by using an external programmer. The programming mode for SST27SF010/020 is activated by asserting 11.4-12V on VPP pin, VDD = 4.5-5.5V, VIL on CE# pin, and VIH on OE# pin. The programming mode for SST27SF512 is activated by asserting 11.4-12V on OE#/VPP pin, VDD = 4.5-5.5V, and VIL on CE# pin. These devices are programmed byteby-byte with the desired data at the desired address using a single pulse (CE# pin low for SST27SF512 and PGM# pin low for SST27SF010/020) of 20 s. Using the MTP programming algorithm, the Byte-Programming process continues byte-by-byte until the entire chip has been programmed.
Product Identification Mode
The Product Identification mode identifies the devices as the SST27SF512, SST27SF010 and SST27SF020 and manufacturer as SST. This mode may be accessed by the hardware method. To activate this mode for SST27SF010/ 020, the programming equipment must force VH (11.4-12V) on address A9 with VPP pin at VDD (4.5-5.5V) or VSS. To activate this mode for SST27SF512, the programming equipment must force VH (11.4-12V) on address A9 with OE#/VPP pin at VIL. Two identifier bytes may then be sequenced from the device outputs by toggling address line A0. For details, see Tables 3 and 4 for hardware operation. TABLE 1: PRODUCT IDENTIFICATION
Address Manufacturer's ID Device ID SST27SF512 SST27SF010 SST27SF020 0001H 0001H 0001H A4H A5H A6H
T1.2 1152
Chip-Erase Operation
The only way to change a data from a "0" to "1" is by electrical erase that changes every bit in the device to "1". Unlike traditional EPROMs, which use UV light to do the ChipErase, the SST27SF512/010/020 uses an electrical ChipErase operation. This saves a significant amount of time (about 30 minutes for each Erase operation). The entire chip can be erased in a single pulse of 100 ms (CE# pin low for SST27SF512 and PGM# pin for SST27SF010/ 020). In order to activate the Erase mode for SST27SF010/ 020, the 11.4-12V is applied to VPP and A9 pins, VDD = 4.55.5V, VIL on CE# pin, and VIH on OE# pin. In order to activate Erase mode for SST27SF512, the 11.4-12V is applied to OE#/VPP and A9 pins, VDD = 4.5-5.5V, and VIL on CE# pin. All other address and data pins are "don't care". The falling edge of CE# (PGM# for SST27SF010/020) will start the Chip-Erase operation. Once the chip has been erased, all bytes must be verified for FFH. Refer to Figures 11 and 12 for the flowcharts.
Data BFH
0000H
(c)2005 Silicon Storage Technology, Inc.
S71152-11-000
9/05
2
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
FUNCTIONAL BLOCK DIAGRAM OF THE SST27SF512
X-Decoder
SuperFlash Memory
A15 - A0
Address Buffer Y-Decoder
CE# OE#/VPP A9
Control Logic
I/O Buffers DQ7 - DQ0
1152 B2.1
FUNCTIONAL BLOCK DIAGRAM OF THE SST27SF010/020
X-Decoder
SuperFlash Memory
AMS - A0
Address Buffer Y-Decoder
CE# OE# A9 VPP PGM#
I/O Buffers Control Logic DQ7 - DQ0
1152 B3.2
AMS = A17 for SST27SF020, A16 for SST27SF010
(c)2005 Silicon Storage Technology, Inc.
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512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
SST27SF512 SST27SF010 SST27SF020
PGM# PGM# A14
VDD
VPP
A12
A15
A16
VDD
VPP
A12
A15
A16
VDD
A12
A15
SST27SF010/020 SST27SF512 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 A6 A5 A4 A3 A2 A1 A0 NC DQ0 5 6 7 8 9 10 11 12 13 SST27SF010/020 SST27SF512 4 3 2 1 32 31 30 29 28 27 26 25 24 23 22 21 14 15 16 17 18 19 20 VSS DQ1 DQ2 NC DQ3 DQ4 DQ5
A13
NC
A7
NC
A17
SST27SF512 SST27SF010/020 A8 A9 A11 NC OE#/VPP A10 CE# DQ7 DQ6
1152 32-plcc P1.4
A14 A13 A8 A9 A11 OE# A10 CE# DQ7
32-lead PLCC Top View
DQ1
DQ2
VSS
DQ3
DQ4
DQ5
FIGURE 1: PIN ASSIGNMENTS FOR 32-LEAD PLCC
SST27SF020 SST27SF010 SST27SF512
A11 A9 A8 A13 A14 NC NC VDD NC NC A15 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
1152 32-tsop P2.2
DQ6
SST27SF512 SST27SF010 SST27SF020
OE#/VPP A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3 OE# OE#
A17 PGM# VPP A16
NC PGM# VPP A16
Standard Pinout Top View Die Up
FIGURE 2: PIN ASSIGNMENTS FOR 32-LEAD TSOP (8MM X 14MM)
(c)2005 Silicon Storage Technology, Inc.
S71152-11-000
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512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
SST27SF020 SST27SF010 SST27SF512 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 SST27SF512 VDD A14 A13 A8 A9 A11 OE#/VPP A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3
1152 28-pdip P3.2
SST27SF010 SST27SF020 1 2 3 4 5 32-pin 6 PDIP 7 8 Top View 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VDD PGM# NC A14 A13 A8 A9 A11 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 VDD PGM# A17 A14 A13 A8 A9 A11 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3
28-pin PDIP Top View
VPP A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS
VPP A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS
1152 32-pdip P4.1
FIGURE 3: PIN ASSIGNMENTS FOR 28-PIN AND 32-PIN PDIP TABLE 2: PIN DESCRIPTION
Symbol AMS1-A0 DQ7-DQ0 CE# OE# OE#/VPP VPP VDD VSS NC Pin Name Address Inputs Data Input/output Chip Enable Output Enable Output Enable/VPP Power Supply for Program or Erase Power Supply Ground No Connection Unconnected pins.
T2.4 1152
Functions To provide memory addresses To output data during Read cycles and receive input data during Program cycles The outputs are in tri-state when OE# or CE# is high. To activate the device when CE# is low For SST27SF010/020, to gate the data output buffers during Read operation For SST27SF512, to gate the data output buffers during Read operation and high voltage pin during Chip-Erase and programming operation For SST27SF010/020, high voltage pin during Chip-Erase and programming operation 11.4-12V To provide 5.0V supply (4.5-5.5V)
1. AMS = Most significant address AMS = A15 for SST27SF512, A16 for SST27SF010, and A17 for SST27SF020
(c)2005 Silicon Storage Technology, Inc.
S71152-11-000
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512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash SST27SF512 / SST27SF010 / SST27SF020
Data Sheet TABLE 3: OPERATION MODES SELECTION FOR SST27SF512
Mode Read Output Disable Program Standby Chip-Erase Program/Erase Inhibit Product Identification CE# VIL VIL VIL VIH VIL VIH VIL OE#/VPP VIL VIH VPPH X VPPH VPPH VIL A9 AIN X1 AIN X VH X VH DQ DOUT High Z DIN High Z High Z High Z Manufacturer's ID (BFH) Device ID (A4H) Address AIN X AIN X X X A15-A1=VIL, A0=VIL A15-A1=VIL, A0=VIH
T3.2 1152
1. X can be VIL or VIH, but no other value. Note: VPPH = 11.4-12V, VH = 11.4-12V
TABLE 4: OPERATION MODES SELECTION FOR SST27SF010/020
Mode Read Output Disable Program Standby Chip-Erase Program/Erase Inhibit Product Identification CE# VIL VIL VIL VIH VIL VIH VIL OE# VIL VIH VIH X VIH X VIL PGM# X1 X VIL X VIL X X A9 AIN X AIN X VH X VH VPP VDD or VSS VDD or VSS VPPH VDD or VSS VPPH VPPH VDD or VSS DQ DOUT High Z DIN High Z High Z High Z Manufacturer's ID (BFH) Device ID2 Address AIN AIN AIN X X X AMS3 - A1=VIL, A0=VIL AMS3 - A1=VIL, A0=VIH
T4.2 1152
1. X can be VIL or VIH, but no other value. 2. Device ID = A5H for SST27SF010 and A6H for SST27SF020 3. AMS = Most significant address AMS = A16 for SST27SF010 and A17 for SST27SF020 Note: VPPH = 11.4-12V, VH = 11.4-12V
(c)2005 Silicon Storage Technology, Inc.
S71152-11-000
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512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash SST27SF512 / SST27SF010 / SST27SF020
Data Sheet Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Maximum Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55C to +125C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65C to +150C D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V Voltage on A9 and VPP Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 14.0V Package Power Dissipation Capability (TA = 25C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Through Hole Lead Soldering Temperature (10 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300C Surface Mount Solder Reflow Temperature1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260C for 10 seconds Output Short Circuit Current2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
1. Excluding certain with-Pb 32-PLCC units, all packages are 260C capable in both non-Pb and with-Pb solder versions. Certain with-Pb 32-PLCC package types are capable of 240C for 10 seconds; please consult the factory for the latest information. 2. Outputs shorted for no more than one second. No more than one output shorted at a time.
OPERATING RANGE
Range Commercial Ambient Temp 0C to +70C VDD 4.5-5.5V VPP 11.4-12V
AC CONDITIONS OF TEST
Input Rise/Fall Time . . . . . . . . . . . 10 ns Output Load . . . . . . . . . . . . . . . . . CL = 30 pF for 70 ns See Figures 9 and 10
TABLE 5: READ MODE DC OPERATING CHARACTERISTICS FOR SST27SF512/010/020 VDD = 4.5-5.5V, VPP=VDD OR VSS (TA = 0C TO +70C (COMMERCIAL))
Limits Symbol Parameter IDD VDD Read Current 30 IPPR VPP Read Current 100 ISB1 ISB2 ILI ILO VIL VIH VOL VOH IH Standby VDD Current (TTL input) Standby VDD Current (CMOS input) Input Leakage Current Output Leakage Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage Supervoltage Current for A9 2.4 200 2.0 3 100 1 10 0.8 VDD+0.5 0.2 A mA A A A V V V V A mA Min Max Units Test Conditions Address input=VILT/VIHT at f=1/TRC Min VDD=VDD Max CE#=OE#=VIL, all I/Os open Address input=VILT/VIHT at f=1/TRC Min VDD=VDD Max, VPP=VDD CE#=OE#=VIL, all I/Os open CE#=VIH, VDD=VDD Max CE#=VDD-0.3 VDD=VDD Max VIN=GND to VDD, VDD=VDD Max VOUT=GND to VDD, VDD=VDD Max VDD=VDD Min VDD=VDD Max IOL=2.1 mA, VDD=VDD Min IOH=-400 A, VDD=VDD Min CE#=OE#=VIL, A9=VH Max
T5.6 1152
(c)2005 Silicon Storage Technology, Inc.
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512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash SST27SF512 / SST27SF010 / SST27SF020
Data Sheet TABLE 6: PROGRAM/ERASE DC OPERATING CHARACTERISTICS FOR SST27SF512 VDD=4.5-5.5V, VPP=VPPH (TA=25C5C)
Limits Symbol Parameter IDD IPP ILI ILO VH IH VPPH VDD Erase or Program Current VPP Erase or Program Current Input Leakage Current Output Leakage Current Supervoltage for A9 Supervoltage Current for A9 High Voltage for OE#/VPP Pin 11.4 11.4 Min Max Units Test Conditions 30 3 1 10 12 200 12 mA mA A A V A V
T6.5 1152
CE#=VIL, OE#/VPP=11.4-12V, VDD=VDD Max CE#=VIL, OE#/VPP=11.4-12V, VDD=VDD Max VIN=GND to VDD, VDD=VDD Max VOUT=GND to VDD, VDD=VDD Max CE#=OE#/VPP=VIL, CE#=OE#/VPP=VIL, A9=VH Max
TABLE 7: PROGRAM/ERASE DC OPERATING CHARACTERISTICS FOR SST27SF010/020 VDD=4.5-5.5V, VPP=VPPH (TA=25C5C)
Limits Symbol Parameter IDD IPP ILI ILO VH IH VPPH VDD Erase or Program Current VPP Erase or Program Current Input Leakage Current Output Leakage Current Supervoltage for A9 Supervoltage Current for A9 High Voltage for VPP Pin 11.4 11.4 Min Max Units Test Conditions 30 3 1 10 12 200 12 mA mA A A V A V
T7.5 1152
CE#=PGM#=VIL, OE#=VIH, VPP=11.4-12V, VDD=VDD Max CE#=PGM#=VIL, OE#=VIH, VPP=11.4-12V, VDD=VDD Max VIN =GND to VDD, VDD=VDD Max VOUT =GND to VDD, VDD=VDD Max CE#=OE#=VIL, CE#=OE#=VIL, A9=VH Max
TABLE 8: RECOMMENDED SYSTEM POWER-UP TIMINGS
Symbol TPU-READ
1
Parameter Power-up to Read Operation Power-up to Write Operation
Minimum 100 100
Units s s
T8.1 1152
TPU-WRITE1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 9: CAPACITANCE (TA = 25C, f=1 Mhz, other pins open)
Parameter CI/O
1
Description I/O Pin Capacitance Input Capacitance
Test Condition VI/O = 0V VIN = 0V
Maximum 12 pF 6 pF
T9.0 1152
CIN1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 10: RELIABILITY CHARACTERISTICS
Symbol NEND1 TDR1 Parameter Endurance Data Retention Minimum Specification 1000 100 Units Cycles Years Test Method JEDEC Standard A117 JEDEC Standard A103
T10.3 1152
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
(c)2005 Silicon Storage Technology, Inc.
S71152-11-000
9/05
8
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
AC CHARACTERISTICS
TABLE 11: READ CYCLE TIMING PARAMETERS VDD = 4.5-5.5V (TA = 0C to +70C (Commercial))
Symbol TRC TCE TAA TOE TCLZ1 TOLZ1 TCHZ1 TOHZ1 TOH1 Parameter Read Cycle Time Chip Enable Access Time Address Access Time Output Enable Access Time CE# Low to Active Output OE# Low to Active Output CE# High to High-Z Output OE# High to High-Z Output Output Hold from Address Change 0 0 0 25 25 Min 70 70 70 35 Max Units ns ns ns ns ns ns ns ns ns
T11.3 1152
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 12: PROGRAM/ERASE CYCLE TIMING PARAMETERS FOR SST27SF512
Symbol TAS TAH TPRT TVPS TVPH TPW TEW TDS TDH TVR TART TA9S TA9H Parameter Address Setup Time Address Hold Time OE#/VPP Pulse Rise Time OE#/VPP Setup Time OE#/VPP Hold Time CE# Program Pulse Width CE# Erase Pulse Width Data Setup Time Data Hold Time OE#/VPP and A9 Recovery Time A9 Rise Time to 12V during Erase A9 Setup Time during Erase A9 Hold Time during Erase Min 1 1 50 1 1 20 100 1 1 1 50 1 1 Max Units s s ns s s s ms s s s ns s s
T12.0 1152
30 500
(c)2005 Silicon Storage Technology, Inc.
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512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash SST27SF512 / SST27SF010 / SST27SF020
Data Sheet TABLE 13: PROGRAM/ERASE CYCLE TIMING PARAMETERS FOR SST27SF010/020
Symbol TCES TCEH TAS TAH TPRT TVPS TVPH TPW TEW TDS TDH TVR TART TA9S TA9H Parameter CE# Setup Time CE# Hold Time Address Setup Time Address Hold Time VPP Pulse Rise Time VPP Setup Time VPP Hold Time PGM# Program Pulse Width PGM# Erase Pulse Width Data Setup Time Data Hold Time A9 Recovery Time for Erase A9 Rise Time to 12V during Erase A9 Setup Time during Erase A9 Hold Time during Erase Min 1 1 1 1 50 1 1 20 100 1 1 1 50 1 1 Max Units s s s s ns s s s ms s s s ns s s
T13.0 1152
30 500
(c)2005 Silicon Storage Technology, Inc.
S71152-11-000
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512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
TRC
TAA
ADDRESS
CE#
TCE
OE#
TOE
TOLZ
TOHZ TOH DATA VALID TCHZ DATA VALID
DQ7-0
HIGH-Z TCLZ
1152 F03.0
FIGURE 4: READ CYCLE TIMING DIAGRAM FOR SST27SF512/010/020
ADDRESS (EXCEPT A9)
CE# TEW
DQ7-0
VPPH OE#/VPP VDD VSS VPPH A9 VIH VIL TART TPRT
TVPS TVPH
TVR
TA9S TVR
TA9H
1152 F04b.1
FIGURE 5: CHIP-ERASE TIMING DIAGRAM FOR SST27SF512
(c)2005 Silicon Storage Technology, Inc.
S71152-11-000
9/05
11
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
ADDRESS (EXCEPT A9) CE#
TCEH
OE# VIH
DQ7-0 VPPH VDD VSS VPPH A9 VIH VIL TART TA9H PGM# TCES
1152 F04c.1
TVPS TVPH TPRT TA9S TVR
VPP
TEW
FIGURE 6: CHIP-ERASE TIMING DIAGRAM FOR SST27SF010/020
ADDRESS
ADDRESS VALID
TAS TAH TPW
CE#
TDS
TDH
DQ7-0
HIGH-Z
DATA VALID
VPPH VDD OE#/VPP
TPRT
TVR
TVPS
VSS
TVPH
1152 F05b.2
FIGURE 7: BYTE-PROGRAM TIMING DIAGRAM FOR SST27SF512
(c)2005 Silicon Storage Technology, Inc.
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512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
ADDRESS
ADDRESS VALID
TAH
CE#
TAS
TCEH
OE#
VIH
TDS TDH
DQ7-0
HIGH-Z VPPH VDD
DATA VALID
TVPS
VPP PGM#
TPRT
VSS
TPW TVPH
TCES
1152 F05c.1
FIGURE 8: BYTE-PROGRAM TIMING DIAGRAM FOR SST27SF010/020
(c)2005 Silicon Storage Technology, Inc.
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512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
VIHT VHT
INPUT REFERENCE POINTS
VHT
OUTPUT
VLT VILT
VLT
1152 F06.0
AC test inputs are driven at VIHT (2.4 V) for a logic "1" and VILT (0.4 V) for a logic "0". Measurement reference points for inputs and outputs are VHT (2.0 V) and VLT (0.8 V). Input rise and fall times (10% 90%) are <10 ns.
Note: VHT - VHIGHTest VLT - VLOW Test VIHT - VINPUT HIGH Test VILT - VINPUT LOW Test
FIGURE 9: AC INPUT/OUTPUT REFERENCE WAVEFORMS
VDD TO TESTER RL HIGH
TO DUT CL RL LOW
1152 F07.1
FIGURE 10: A TEST LOAD EXAMPLE
(c)2005 Silicon Storage Technology, Inc.
S71152-11-000
9/05
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512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
Start Start A9 = VH, VPP = VPPH A9 = VH CE# = VIL, OE# = VIH OE#/VPP = VPPH Erase 100ms pulse (PGM# = VIL)
Erase 100ms pulse (CE# = VIL)
PGM# = VIH
OE#/VPP = VDD or VSS A9 = VIL or VIH
A9 = VIL or VIH
Wait for OE#/VPP and A9 Recovery Time Read Device (CE# = OE# = VIL)
Wait A9 Recovery Time
Read Device
No Compare All bytes to FFH Yes Compare all bytes to FFH Yes Device Passed
No
Device Failed
Device Passed
Device Failed
1152 F08b.2
1152 F08c.1
FIGURE 11: CHIP-ERASE ALGORITHM FOR SST27SF512
FIGURE 12: CHIP-ERASE ALGORITHM FOR SST27SF010/020
(c)2005 Silicon Storage Technology, Inc.
S71152-11-000
9/05
15
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
Start
Erase*
OE#/VPP = VPPH
Address = First Location
Program 20s pulse (CE# = VIL)
Increment Address No
Last Address? Yes
OE#/VPP = VDD or VSS
Wait for OE#/VPP RecoveryTime Read Device (CE# = OE# = VIL)
Compare all bytes to original data Yes
No
Device Passed
Device Failed
1152 F09b.2
* See Figure 11
FIGURE 13: BYTE-PROGRAM ALGORITHM FOR SST27SF512
(c)2005 Silicon Storage Technology, Inc.
S71152-11-000
9/05
16
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
Start
Erase*
VPP = VPPH
Address = First Location
CE# = VIL, OE# = VIH
Program 20s pulse (PGM# = VIL)
Increment Address No
Last Address? Yes Read Device
Compare all bytes to original data Yes Device Passed
No
Device Failed
1152 F09c.1
* See Figure 12
FIGURE 14: BYTE-PROGRAM ALGORITHM FOR SST27SF010/020
(c)2005 Silicon Storage Technology, Inc.
17
S71152-11-000
9/05
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
PRODUCT ORDERING INFORMATION
SST 27 XX SF 020 XX XXXX - 70 - XXX 3C XX NH - XXX E X Environmental Attribute E1 = non-Pb Package Modifier G = 28 pins H = 32 pins or leads Package Type N = PLCC P = PDIP W = TSOP (type 1, die up, 8mm x 14mm) Temperature Range C = Commercial = 0C to +70C Minimum Endurance 3 = 1,000 cycles Read Access Speed 70 = 70 ns Device Density - x8 Organization 020 = 2 Mbit 010 = 1 Mbit 512 = 512 Kbit Voltage Range S = 4.5-5.5V Product Series 27 = Many-Time Programmable Flash OTP/EPROM replacement with EPROM pinout
1. Environmental suffix "E" denotes non-Pb solder. SST non-Pb solder devices are "RoHS Compliant".
Valid combinations for SST27SF512 SST27SF512-70-3C-NH SST27SF512-70-3C-NHE SST27SF512-70-3C-WH SST27SF512-70-3C-WHE SST27SF512-70-3C-PG SST27SF512-70-3C-PGE
Valid combinations for SST27SF010 SST27SF010-70-3C-NH SST27SF010-70-3C-NHE SST27SF010-70-3C-WH SST27SF010-70-3C-WHE SST27SF010-70-3C-PH SST27SF010-70-3C-PHE
Valid combinations for SST27SF020 SST27SF020-70-3C-NH SST27SF020-70-3C-NHE SST27SF020-70-3C-WH SST27SF020-70-3C-WHE SST27SF020-70-3C-PH SST27SF020-70-3C-PHE
Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations.
(c)2005 Silicon Storage Technology, Inc. S71152-11-000 9/05
18
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
PACKAGING DIAGRAMS
TOP VIEW
Optional Pin #1 Identifier .048 .042 .495 .485 .453 .447
2 1 32
SIDE VIEW
.112 .106 .020 R. MAX. .029 x 30 .023 .040 R. .030
BOTTOM VIEW
.042 .048 .595 .553 .585 .547 .032 .026
.021 .013 .400 .530 BSC .490
.050 BSC .015 Min. .050 BSC .095 .075 .140 .125 .032 .026
Note: 1. Complies with JEDEC publication 95 MS-016 AE dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in inches (max/min). 3. Dimensions do not include mold flash. Maximum allowable mold flash is .008 inches. 4. Coplanarity: 4 mils.
32-plcc-NH-3
32-LEAD PLASTIC LEAD CHIP CARRIER (PLCC) SST PACKAGE CODE: NH
(c)2005 Silicon Storage Technology, Inc.
S71152-11-000
9/05
19
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
Pin # 1 Identifier
1.05 0.95 0.50 BSC
8.10 7.90
0.27 0.17
12.50 12.30 DETAIL 1.20 max. 0.70 0.50 14.20 13.80
0.15 0.05
0- 5 0.70 0.50 Note: 1. Complies with JEDEC publication 95 MO-142 BA dimensions, although some dimensions may be more stringent. 1mm 2. All linear dimensions are in millimeters (max/min). 3. Coplanarity: 0.1 mm 4. Maximum allowable mold flash is 0.15 mm at the package ends, and 0.25 mm between leads.
32-tsop-WH-7
32-LEAD THIN SMALL OUTLINE PACKAGE (TSOP) 8MM X 14MM SST PACKAGE CODE: WH
(c)2005 Silicon Storage Technology, Inc.
S71152-11-000
9/05
20
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
28
C L
Pin #1 Identifier
1
.075 .065 Base Plane Seating Plane
1.455 1.445
7 4 PLCS. .200 .170
.625 .600 .550 .530
.050 .015 .100 BSC .150 .120
.012 .008 .600 BSC
0 15
.080 .070
.065 .045
.022 .016
Note: 1. Complies with JEDEC publication 95 MO-015 AH dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in inches (max/min). 3. Dimensions do not include mold flash. Maximum allowable mold flash is .010 inches. 28-pdip-PG-3
28-PIN PLASTIC DUAL IN-LINE PINS (PDIP) SST PACKAGE CODE: PG
(c)2005 Silicon Storage Technology, Inc.
S71152-11-000
9/05
21
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
32
C L
Pin #1 Identifier
1
.075 .065 Base Plane Seating Plane
1.655 1.645
7 4 PLCS. .200 .170
.625 .600 .550 .530
.050 .015 .100 BSC .150 .120
.012 .008 .600 BSC
0 15
.080 .070
.065 .045
.022 .016
Note: 1. Complies with JEDEC publication 95 MO-015 AP dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in inches (max/min). 3. Dimensions do not include mold flash. Maximum allowable mold flash is .010 inches. 32-pdip-PH-3
32-PIN PLASTIC DUAL IN-LINE PINS (PDIP) SST PACKAGE CODE: PH
(c)2005 Silicon Storage Technology, Inc.
S71152-11-000
9/05
22
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash SST27SF512 / SST27SF010 / SST27SF020
Data Sheet TABLE 14: REVISION HISTORY
Number 02 03 04 05 06 07 08 09 Description Date Feb 2002 Apr 2002 Jul 2002 Sep 2003 Nov 2003 Nov 2003 Apr 2004 Mar 2005
* * * * * * * * * * * *
2002 Data Book Document Control Release (SST Internal): No technical changes Corrected IH Supervoltage Current for A9 from 100 A to 200 A in Tables 5, 6, and 7 Corrected the Test Conditions for IDD and IPPR in Table 5 on page 7 Corrected the Max value for IPP from 1 mA to 3 mA (See Tables 6 and 7) Added MPNs for non-PB packages (See page 18) 2004 Data Book Corrected caption for Figure 5 from "Read Cycle" to "Chip-Erase" Removed 256 Kbit parts - refer to EOL Product Data Sheet S71152(02) Removed all 90 ns parts - refer to EOL Product Data Sheet S71152(03) Added RoHS compliance information on page 1 and in the "Product Ordering Information" on page 18 Added the solder reflow temperature to the "Absolute Maximum Stress Ratings" on page 7. Removed obsolete Latch-up parameter from Table 10 on page 8 Corrected VPP voltage from 11.4-12.6V to 11.4-12V
10 11
* *
May 2005 Sep 2005
Silicon Storage Technology, Inc. * 1171 Sonora Court * Sunnyvale, CA 94086 * Telephone 408-735-9110 * Fax 408-735-9036 www.SuperFlash.com or www.sst.com
(c)2005 Silicon Storage Technology, Inc. S71152-11-000 9/05
23

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